电子信息学院学术报告:Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

报告题目:Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

报告人:Prof. Man Wong, Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology, Hong Kong

报告时间:2019326日(星期二) 上午9:00

报告地点:博习楼327会议室

邀请人:王明湘教授

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报告摘要: Driving of a large-area, high-resolution and high frame-rate active-matrix display demands proper control of the signal delay along a scan line, thus also the parasitic overlap capacitance between the source/drain (S/D) regions and the gate electrode of an address-transistor. While such capacitance can be minimized by employing a transistor with the edges of the S/D regions self-aligned to those of the gate electrode, actual implementation is easier with a top-gate rather than the more popularly deployed bottom-gate architecture. Presently demonstrated is a self-aligned bottom-gate indium-gallium-zinc oxide transistor. The extent of the overlap between the S/D and the bottom gate is determined by a thermal “activation” process, similar to how it is controlled in a conventional top-gate, self-aligned transistor.

 

 报告人简介:

Man Wong (S ’83 – M ’88 – SM ’00) was born in Beijing, China. From 1979 to 1984, he studied at the Massachusetts Institute of Technology, USA, where he obtained his BS and MS degrees in Electrical Engineering. From 1985 to 1988, he was at the Center for Integrated Systems at Stanford University, USA, where he worked on tungsten-gate MOS technology and obtained his PhD degree, also in Electrical Engineering. From 1988 to 1992, he was with the Semiconductor Process and Design Center of Texas Instruments, USA and worked on the modeling and development of integrated-circuit metallization systems and dry/vapor surface-conditioning processes. He is currently with the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology, Hong Kong. His research interests include micro-fabrication technology, device structure and material; physics and technology of thin-film transistor; organic light-emitting diode display technology; modeling and implementation of integrated micro-systems; and thin-film solar cell device and process technology. He is a member of Tau Beta Pi, Eta Kappa Nu and Sigma Xi.

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